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6116LA45DB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116LA45DB |
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6116LA45DB
Integrated Device Technology Inc
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1 | CDIP-24, Tube | 6116LA45DB |
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IDT6116LA45DB
Integrated Device Technology Inc
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1 | Standard SRAM, 2KX8, 45ns, CMOS, CDIP24, 0.600 INCH, CERAMIC, DIP-24 | IDT6116LA45DB |
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IDT6116LA45DB
Renesas Electronics Corporation
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1 | Standard SRAM, 2KX8, 45ns, CMOS, CDIP24 | IDT6116LA45DB |
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