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FDN5618P Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDN5618P onsemi	1	High Performance Trench Technology for Extremely Low rDS(on); –1.25 A, –60 V; Fast Switching Speed; RDS(ON) = 0.200Ω @ VGS = –10 V; RDS(ON) = 0.230Ω @ VGS = –4.5 V	SOT23 (3-Pin)	FDN5618P	3D model available Symbol and footprint available 3	1 Download Model
	FDN5618P Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3		FDN5618P	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN5618P Rochester Electronics LLC	1	1.25A, 60V, 0.17ohm, P-CHANNEL, Si, POWER, MOSFET, SUPERSOT-3		FDN5618P	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN5618P-F095 Fairchild Semiconductor Corporation	1	Transistor		FDN5618P-F095	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDN5618P_G onsemi	0			FDN5618P_G	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN5618PD87Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3		FDN5618PD87Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN5618P_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3		FDN5618P_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN5618PT/R_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3		FDN5618PT/R_NL	3D model not available Symbol and footprint not available 0	0 Build or Request

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