M1008 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	M1008 Rainbow Technology	1	MEMS digital CH4 Sensor Module for Methane		M1008	3D model not available Symbol and footprint not available 0	0 Build or Request
	M10082040108X 0I Renesas Electronics	1	High Performance Serial MRAM Memory	Small Outline Packages	M10082040108X 0I	3D model available Symbol and footprint available 3	1 Download Model
	M10082040054X0ISAY Renesas Electronics	1	The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.	Small Outline Packages	M10082040054X0ISAY	3D model available Symbol and footprint available 3	1 Download Model
	M10082040054X0ISAR Renesas Electronics	1	The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.	Small Outline Packages	M10082040054X0ISAR	3D model available Symbol and footprint available 3	1 Download Model

	M10082040108X0PWAR Renesas Electronics	1	The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.	Small Outline No-lead	M10082040108X0PWAR	3D model available Symbol and footprint available 3	1 Download Model
	M10082040108X0PSAR Renesas Electronics	1	The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.	Small Outline Packages	M10082040108X0PSAR	3D model available Symbol and footprint available 3	1 Download Model
	M10082040054X0PSAR Renesas Electronics	1	The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.	Small Outline Packages	M10082040054X0PSAR	3D model available Symbol and footprint available 3	1 Download Model
	M10082040054X0PWAR Renesas Electronics	1	The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.	Small Outline No-lead	M10082040054X0PWAR	3D model available Symbol and footprint available 3	1 Download Model
	M10082040054X0PSAY Renesas Electronics	1	The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.	Small Outline Packages	M10082040054X0PSAY	3D model available Symbol and footprint available 3	1 Download Model
	M10082040108X0PSAY Renesas Electronics	1	The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.	Small Outline Packages	M10082040108X0PSAY	3D model available Symbol and footprint available 3	1 Download Model
	M10082040108X0PWAY Renesas Electronics	1	The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.	Small Outline No-lead	M10082040108X0PWAY	3D model available Symbol and footprint available 3	1 Download Model
	M10082040054X0IWAY Renesas Electronics	1	The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.	Small Outline No-lead	M10082040054X0IWAY	3D model available Symbol and footprint available 3	1 Download Model
	M10082040108X0IWAY Renesas Electronics	1	The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.	Small Outline No-lead	M10082040108X0IWAY	3D model available Symbol and footprint available 3	1 Download Model
	M10082040054X0PWAY Renesas Electronics	1	The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.	Small Outline No-lead	M10082040054X0PWAY	3D model available Symbol and footprint available 3	1 Download Model
	M10082040108X0ISAY Renesas Electronics	1	The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.	Small Outline Packages	M10082040108X0ISAY	3D model available Symbol and footprint available 3	1 Download Model

	M10082040108X0ISAR Renesas Electronics	1	The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.	Small Outline Packages	M10082040108X0ISAR	3D model available Symbol and footprint available 3	1 Download Model
	IHDM1008BCEV6R8M30 Vishay	1	Fixed Inductors 6.8uH 20%	Other	IHDM1008BCEV6R8M30	3D model available Symbol and footprint available 3	1 Download Model
	IHDM1008BCEV1R2M3A Vishay	1	Fixed Inductors 1008BC 1.2uH 20% AEC-Q200	Other	IHDM1008BCEV1R2M3A	3D model available Symbol and footprint available 3	1 Download Model
	IHDM1008BCEV3R3M30 Vishay	1	Fixed Inductors 3.3uH 20%	Other	IHDM1008BCEV3R3M30	3D model available Symbol and footprint available 3	1 Download Model
	PM1008-1R8K-RC Bourns	1	CHIP INDUCTOR 1800 nH ±10 %	Other	PM1008-1R8K-RC	3D model not available Symbol and footprint available 2	1 Download Model
	IHDM1008BCEV1R3M20 Vishay	1	Fixed Inductors 1.3uH 20% 84 A	Other	IHDM1008BCEV1R3M20	3D model available Symbol and footprint available 3	1 Download Model
	RX-1M1008FE Ohmite	1	Ohmite Hi-Meg Series Axial Thick Film Resistor 10GΩ ±1% 0.5W ±50ppm/°C	Resistors, Axial Diameter Horizontal Mounting	RX-1M1008FE	3D model available Symbol and footprint available 3	1 Download Model
	IHDM1008BCEV1R2M30 Vishay	1	High Current, Through-Hole Inductor Edge-Wound Series	Other	IHDM1008BCEV1R2M30	3D model available Symbol and footprint available 3	1 Download Model
	IHDM1008BCEV100M30 Vishay	1	VISHAY - IHDM1008BCEV100M30 - INDUCTOR, 10UH, 20%, 30A	Other	IHDM1008BCEV100M30	3D model available Symbol and footprint available 3	1 Download Model
	IHDM1008BCEV2R2M3A Vishay	1	2.2 µH Unshielded Drum Core, Wirewound Inductor 70 A 0.4mOhm Max Nonstandard	Other	IHDM1008BCEV2R2M3A	3D model available Symbol and footprint available 3	1 Download Model
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