Showing 25 of 1693 results
Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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W631GG6MB11S
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG6MB11S |
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W957D8MFYA5A
Winbond
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1 | Interface: HyperBus• Power supply: 1.7V~2.0V or 2.7V~3.6V• Maximum clock rate: 200MHz• Double-Data Rate (DDR) Up to 400 MT/s• Clock:– Single ended clock (CK)– Differential clock (CK/CK#)• Chip Select (CS#)• 8-bit data bus (DQ[7:0])• Hardware reset (RESET#)• Read-Write Data Strobe (RWDS)– Bidirectional Data Strobe / Mask– Output at the start of all transactions to indicaterefresh latency– Output during read transactions as Read DataStrobe– Input during write transactions as Wr | BGA | W957D8MFYA5A |
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W9751G6KB18K
Winbond
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1 | 512Mb DDR2 SDRAM 1066MHz WBGA84 | BGA | W9751G6KB18K |
3
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W631GU8RB09I
Winbond
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1 | Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V⚫ Backward compatible to VDD, VDDQ = 1.5V ± 0.075V⚫ Double Data Rate architecture: two data transfers per clock cycle⚫ Eight internal banks for concurrent operation⚫ 8 bit prefetch architecture⚫ CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14⚫ Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)⚫ Programmable read burst ordering: interleaved or nibble sequential⚫ Bi-directional, dif | BGA | W631GU8RB09I |
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W66AP6NBHAHS
Winbond
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1 | BGA100 | BGA | W66AP6NBHAHS |
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W25Q80RVSNJM
Winbond
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1 | 8Mb Serial NOR Flash 133MHz SOP8 | Small Outline Packages | W25Q80RVSNJM |
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W631GG8MB15A
Winbond
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1 | SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W631GG8MB15A |
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W631GU8RB12K
Winbond
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1 | 1Gb DDR3 SDRAM 1600MHz VFBGA96 | BGA | W631GU8RB12K |
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W957D8MFYA5K
Winbond
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1 | 128Mb HYPERRAM 400MHz TFBGA (5X5)24 | BGA | W957D8MFYA5K |
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W25Q32JVSFSM
Winbond
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1 | 32Mb Serial NOR Flash 133MHz SOP16 | Small Outline Packages | W25Q32JVSFSM |
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W978H6KBVA1K
Winbond
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1 | 256Mb Low Power DDR2 SDRAM 1066MHz VFBGA134 | BGA | W978H6KBVA1K |
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W631GG8MB12S
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG8MB12S |
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W25Q512JVFJQ
Winbond
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1 | 512Mb Serial NOR Flash 133MHz SOP16 | Small Outline Packages | W25Q512JVFJQ |
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W66AP6NBHAFK
Winbond
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1 | 1Gb Low Power DDR4/4X SDRAM 3200MHz VFBGA100 | BGA | W66AP6NBHAFK |
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W25M512JVFAM
Winbond
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1 | 512Mb Serial NOR Flash 104MHz SOP16 2.7V - 3.6V -40℃ ~ 85℃ / -40℃ ~ 105℃ / -40℃ ~ 125℃ | Small Outline Packages | W25M512JVFAM |
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W632GU8RB09S
Winbond
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1 | 32M x 8 BANKS x 8 BIT DDR3L SDRAM | BGA | W632GU8RB09S |
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W631GU6RB11I
Winbond
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1 | 1Gb DDR3 SDRAM 1866MHz VFBGA96 | BGA | W631GU6RB11I |
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W638GU6QB-11
Winbond
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1 | ⚫ Backward compatible to VDD, VDDQ = 1.5V ± 0.075V⚫ Double Data Rate architecture: two data transfers per clock cycle⚫ Eight internal banks for concurrent operation⚫ 8 bit prefetch architecture⚫ CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14⚫ Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)⚫ Programmable read burst ordering: interleaved or nibble sequential⚫ Bi-directional, differential data strobes (DQS and DQS#) are transmitted / r | BGA | W638GU6QB-11 |
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W979H6KBVA2A
Winbond
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1 | Low Power DDR2 SDRAM 800MHz | BGA | W979H6KBVA2A |
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W631GG8MB15W
Winbond
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1 | SDRAM - DDR3 Memory IC 1Gbit Parallel 667 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W631GG8MB15W |
3
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W631GU8RB-12
Winbond
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1 | 1Gb DDR3 SDRAM 1600MHz VFBGA78 | BGA | W631GU8RB-12 |
3
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W632GG8MB12A
Winbond
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1 | SDRAM - DDR3 Memory IC 2Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W632GG8MB12A |
3
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W25Q64JVZPSM
Winbond
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1 | New Family of SpiFlash Memories– W25Q64JV: 64M-bit / 8M-byte– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Single, Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– Min. 100K Program-Erase cycles per sector– More than 20-year data retention Low Power, Wide Temperature Range– Single 2.7 to 3.6V supply– <1µA Power-down (typ.)– -40°C to +85°C op | Small Outline No-lead | W25Q64JVZPSM |
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W25Q32JVTBAM
Winbond
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1 | New Family of SpiFlash Memories– W25Q32JV: 32M-bit / 4M-byte– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1,– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Single, Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles per sector– More than 20-year data retention Efficient “Continuous Read”– Continuous Read with 8/16/32/64-Byte | BGA | W25Q32JVTBAM |
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W29N01HZDJNA
Winbond
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1 | FLASH - NAND (SLC) Memory IC 1Gbit ONFI 22 ns 48-VFBGA (8x6.5) | BGA | W29N01HZDJNA |
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