Showing 25 of 1693 results
Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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W66AQ6NBHAHJ
Winbond
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1 | BGA100 | BGA | W66AQ6NBHAHJ |
3
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W632GU6MB12A
Winbond
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1 | 2Gb DDR3 SDRAM 1600MHz VFBGA96 | BGA | W632GU6MB12A |
3
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Download Model |
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W25Q512NWBJQ
Winbond
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1 | New Family of SpiFlash Memories– W25Q512NW: 512M-bit / 64M-byte– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1,– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– 3 or 4-Byte Addressing Mode– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Standard/Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles– More than 20-year data retention Efficient Read– Allows true XIP (execute i | BGA | W25Q512NWBJQ |
3
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Download Model |
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W634GG8NB12K
Winbond
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1 | DDR3 SDRAM 1600MHz | BGA | W634GG8NB12K |
3
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Download Model |
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W632GG6NB12K
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W632GG6NB12K |
3
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Download Model |
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W25N01KVZPJU
Winbond
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1 | QspiNAND Flash 104MHz | Small Outline No-lead | W25N01KVZPJU |
3
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Download Model |
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W25N04KVTBJR
Winbond
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1 | New W25N Family of QspiNANDMemories– W25N04KV: 4G-bit / 512M-Byte– Standard SPI: CLK, /CS, DI, DO, /WP,/Hold– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Compatible SPI serial flash commands Highest Performance Serial NAND Flash– 104MHz Standard/Dual/Quad SPI clocks– 208/416MHz equivalent Dual/Quad SPI– 50MB/S sequential data transfer rate– Fast Program/Erase performance– 60,000 erase/program cycles– 10-year data retention Low Power, Wi | BGA | W25N04KVTBJR |
3
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Download Model |
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W632GU6NB11W
Winbond
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1 | PACKAGE-BGA96 | BGA | W632GU6NB11W |
3
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Download Model |
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W634GU8NB09K
Winbond
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1 | 4Gb DDR3 SDRAM 2133MHz VFBGA78 | BGA | W634GU8NB09K |
3
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Download Model |
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W25Q512NWEIQ
Winbond
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1 | 512Mb Serial NOR Flash 133MHz SON8 | Small Outline No-lead | W25Q512NWEIQ |
3
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Download Model |
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W97AH6NBVA2W
Winbond
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1 | 1Gb Low Power DDR2 SDRAM 800MHz VFBGA134 | BGA | W97AH6NBVA2W |
3
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Download Model |
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W66AQ6NBHAFI
Winbond
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1 | BGA100 | BGA | W66AQ6NBHAFI |
3
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Download Model |
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W631GU8NB12A
Winbond
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1 | DDR3 SDRAM 1600MHz | BGA | W631GU8NB12A |
3
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Download Model |
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W66AP6NBHAGI
Winbond
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1 | 1Gb Low Power DDR4/4X SDRAM 3733MHz VFBGA100 | BGA | W66AP6NBHAGI |
3
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Download Model |
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W25Q12PWZPIM
Winbond
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1 | 128Mb Serial NOR Flash 166MHz SON8 | Small Outline No-lead | W25Q12PWZPIM |
3
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Download Model |
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W25Q80EWUXIE
Winbond
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1 | 8Mb Serial NOR Flash 104MHz SON8 | Small Outline No-lead | W25Q80EWUXIE |
3
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Download Model |
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W25N01GWTCIG
Winbond
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1 | 1Gb Serial NAND Flash Memory with uniform 2KB+64B page size and set Buffer Read Mode as default | BGA | W25N01GWTCIG |
3
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Download Model |
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W25Q32JWXGIQ
Winbond
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1 | 32Mb Serial NOR Flash 133MHz SON8 | Small Outline No-lead | W25Q32JWXGIQ |
3
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Download Model |
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W25Q20EWSNJG
Winbond
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1 | 2Mb Serial NOR Flash 104MHz SOP8 | Small Outline Packages | W25Q20EWSNJG |
3
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Download Model |
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W29N04GVSIAF
Winbond
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1 | • Basic Features– Density: 4Gbit (Single chip solution)– Vcc: 2.7V to 3.6V– Bus width: x8– Operating temperature▪ Industrial: -40°C to 85°C• Single-Level Cell (SLC) technology.• Organization– Density: 4G-bit/512M-byte– Page size▪ 2,112 bytes (2048 + 64 bytes)– Block size▪ 64 pages (128K + 4K bytes)• Highest Performance– Read performance (Max.)▪ Random read: 25us▪ Sequential read cycle: 25ns– Write Erase performance▪ Page program time: 250us(typ.)▪ Block erase time: 2ms( | Small Outline Packages | W29N04GVSIAF |
3
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Download Model |
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W25Q256JVEIQ
Winbond
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1 | 256M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI | Small Outline No-lead | W25Q256JVEIQ |
3
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Download Model |
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W25Q64JVTCJQ
Winbond
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1 | 64Mb Serial NOR Flash 133MHz TFBGA (4X6)24 | BGA | W25Q64JVTCJQ |
3
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Download Model |
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W25Q512NWEIM
Winbond
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1 | 512Mb Serial NOR Flash 133MHz SON8 | Small Outline No-lead | W25Q512NWEIM |
3
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Download Model |
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W25Q16JWXHIM
Winbond
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1 | New Family of SpiFlash Memories– W25Q16JW: 16M-bit / 2M-byte (2,097,152)– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– QPI: CLK, /CS, IO0, IO1, IO2, IO3– SPI/QPI DTR(Double Transfer Rate) Read– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Quad I/O SPI clocks– 208/416MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles– More than 20 | Small Outline No-lead | W25Q16JWXHIM |
3
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Download Model |
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W25Q16JWZPJQ
Winbond
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1 | New Family of SpiFlash Memories– W25Q16JW: 16M-bit / 2M-byte– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1,– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Quad I/O SPI clocks– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles– More than 20-year data retention Low Power, Wide Temperature Range– Single 1.65V to 1.95V supply– <0.1µA Power-down (typ.)– -40°C to +85°C operating range | Small Outline No-lead | W25Q16JWZPJQ |
3
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Download Model |