Showing 25 of 1693 results
Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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W632GG6MB15W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W632GG6MB15W |
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W9751G6NB18W
Winbond
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1 | DDR2 SDRAM 1066MHz | BGA | W9751G6NB18W |
3
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W94AD6KBHA6A
Winbond
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1 | 1Gb Low Power DDR SDRAM 333MHz VFBGA60 | BGA | W94AD6KBHA6A |
3
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W631GG6MB09W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG6MB09W |
3
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W632GU6NB12W
Winbond
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1 | 2Gb DDR3 SDRAM 1600MHz VFBGA96 | BGA | W632GU6NB12W |
3
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W632GG8MB15K
Winbond
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1 | DDR3 SDRAM 1333MHz Memory IC 2Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W632GG8MB15K |
3
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W25Q01NWZEJM
Winbond
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1 | New Family of SpiFlash Memories– W25Q01NW: two 512M-bit / 128M-byte– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1,– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– 3 or 4-Byte Addressing Mode– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Standard/Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles– More than 20-year data retention Efficient “Continuous Read”– Quad Peri | Small Outline No-lead | W25Q01NWZEJM |
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W634GU8RB12J
Winbond
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1 | DDR3 SDRAM 1600MHz | BGA | W634GU8RB12J |
3
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W634GG6NB11A
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W634GG6NB11A |
3
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W9825G6KB-6J
Winbond
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1 | 256Mb SDRAM 166MHz TFBGA 54 5 mA -40°C ~ 105°C | BGA | W9825G6KB-6J |
3
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W25Q16JVSSSM
Winbond
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1 | New Family of SpiFlash Memories– W25Q16JV: 16M-bit / 2M-byte (2,097,152)– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Single, Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles per sector– More than 20-year data retention Efficient “Continuous Read”– Continuous Read with 8/16/32 | Small Outline Packages | W25Q16JVSSSM |
3
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W66AQ6NBHAHA
Winbond
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1 | BGA100 | BGA | W66AQ6NBHAHA |
3
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W634GU8NB15W
Winbond
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1 | DDR3 SDRAM 1333MHz | BGA | W634GU8NB15W |
3
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Download Model |
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W632GU6NB15W
Winbond
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1 | 2Gb DDR3 SDRAM 1333MHz VFBGA96 | BGA | W632GU6NB15W |
3
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W9751G8NB-3K
Winbond
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1 | Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data | BGA | W9751G8NB-3K |
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W25Q01NWZEIN
Winbond
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1 | Serial NOR Flash 133MHz | Small Outline No-lead | W25Q01NWZEIN |
3
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W25Q32RVXHJQ
Winbond
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1 | 32Mb Serial NOR Flash 133MHz SON8 | Small Outline No-lead | W25Q32RVXHJQ |
3
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W25N01KVZPJE
Winbond
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1 | New W25N Family of QspiNANDMemories– W25N01KV: 1G-bit / 128M-Byte– Standard SPI: CLK, /CS, DI, DO, /WP,/Hold– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Compatible SPI serial flash commands Highest Performance Serial NAND Flash– 104MHz Standard/Dual/Quad SPI clocks– 208/416MHz equivalent Dual/Quad SPI– Fast Program/Erase performance– 100,000 erase/program cycles(3)– 10-year data retention Low Power, Wide Temperature Range– Single 2.7 to | Small Outline No-lead | W25N01KVZPJE |
3
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W634GG6NB12W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W634GG6NB12W |
3
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Download Model |
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W632GU8RB12I
Winbond
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1 | 2Gb DDR3 SDRAM 1600MHz VFBGA78 | BGA | W632GU8RB12I |
3
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Download Model |
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W632GU6NB12K
Winbond
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1 | 2Gb DDR3 SDRAM 1600MHz VFBGA96 | BGA | W632GU6NB12K |
3
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Download Model |
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W632GG6NB09A
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit | BGA | W632GG6NB09A |
3
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Download Model |
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W631GU8RB12J
Winbond
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1 | ⚫ Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V⚫ Backward compatible to VDD, VDDQ = 1.5V ± 0.075V⚫ Double Data Rate architecture: two data transfers per clock cycle⚫ Eight internal banks for concurrent operation⚫ 8 bit prefetch architecture⚫ CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14⚫ Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)⚫ Programmable read burst ordering: interleaved or nibble sequential⚫ Bi-directional, d | BGA | W631GU8RB12J |
3
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Download Model |
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W25N01JWTBKG
Winbond
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1 | New W25N Family of SpiFlash Memories– W25N01JW: 1G-bit / 128M-Byte– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold,– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Compatible SPI Serial Flash commands Highest Performance Serial NAND Flash– 166MHz Standard/Dual/Quad SPI clocks– 332/664MHz equivalent Dual/Quad SPI– DTR (Dual Transfer Rate) up to 80MHz– 80MB/s continuous data transfer rate– Fast Program/Erase performance– Endurance T.B.D Erase/Program C | BGA | W25N01JWTBKG |
3
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W631GU6NB11K
Winbond
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1 | SDRAM - DDR3L Memory IC 1Gbit Parallel 933 MHz 20 ns 96-VFBGA (7.5x13) | BGA | W631GU6NB11K |
3
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