Showing 25 of 1693 results
Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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W25N01GVTBAT
Winbond
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1 | New W25N Family of SpiFlash Memories– W25N01GV: 1G-bit / 128M-byte– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Compatible SPI serial flash commands Highest Performance Serial NAND Flash– 104MHz Standard/Dual/Quad SPI clocks– 208/416MHz equivalent Dual/Quad SPI– 50MB/S continuous data transfer rate– Fast Program/Erase performance– 100,000 erase/program cycles(4)– 10-year data retention Efficient “ | BGA | W25N01GVTBAT |
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W25Q32JWZPAM
Winbond
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1 | 32Mb Serial NOR Flash 104MHz SON8 | Small Outline No-lead | W25Q32JWZPAM |
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W632GU8RB09J
Winbond
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1 | 2Gb DDR3 SDRAM 2133MHz VFBGA78 | BGA | W632GU8RB09J |
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W632GU6QB09I
Winbond
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1 | 2Gb DDR3 SDRAM 2133MHz VFBGA96 | BGA | W632GU6QB09I |
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W631GU6RB09I
Winbond
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1 | 1Gb DDR3 SDRAM 2133MHz VFBGA96 | BGA | W631GU6RB09I |
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W634GU8QB12I
Winbond
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1 | 4Gb DDR3 SDRAM 1600MHz VFBGA78 | BGA | W634GU8QB12I |
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W25M512JWCSQ
Winbond
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1 | Serial NOR Flash 104MHz | BGA | W25M512JWCSQ |
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W94AD6KBHA6K
Winbond
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1 | 1Gb Low Power DDR SDRAM 333MHz VFBGA60 | BGA | W94AD6KBHA6K |
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W9751G8NB25K
Winbond
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1 | 512Mb DDR2 SDRAM 800MHz VFBGA60 | BGA | W9751G8NB25K |
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W25M512JVBAQ
Winbond
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1 | 512Mb Serial NOR Flash 104MHz TFBGA (5X5)24 | BGA | W25M512JVBAQ |
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W25Q12PWSSIM
Winbond
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1 | New Family of SpiFlash Memories– W25Q12PW: 128M-bit / 16M-byte– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– QPI: CLK, /CS, IO0, IO1, IO2, IO3– SPI/QPI DTR(Double Transfer Rate) Read– On-chip ECC(1-Bit correction every 16-Byte)(1) Highest Performance Serial Flash–166MHz Quad I/O clocks– 83MB/S continuous data transfer rate– Min. 100K Program-Erase cycles(2)– More than 20-year data retention Efficie | Small Outline Packages | W25Q12PWSSIM |
3
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W632GG6MB15A
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W632GG6MB15A |
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W631GU8MB12S
Winbond
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1 | SDRAM - DDR3L Memory IC 1Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W631GU8MB12S |
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W25M512JWFSM
Winbond
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1 | Serial NOR Flash 104MHz | Small Outline Packages | W25M512JWFSM |
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W632GU8RB09A
Winbond
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1 | 2Gb DDR3 SDRAM 2133MHz VFBGA96 | BGA | W632GU8RB09A |
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W631GG8MB09S
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG8MB09S |
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W632GG6MB15K
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit | BGA | W632GG6MB15K |
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W9825G6KB-5A
Winbond
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1 | 256Mb SDRAM 200MHz TFBGA 54 2 mA 0°C ~ 70°C | BGA | W9825G6KB-5A |
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W9725G8KB18A
Winbond
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1 | 256Mb DDR2 SDRAM 1066MHz WBGA60 | BGA | W9725G8KB18A |
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W631GU6NB12A
Winbond
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1 | 1Gb DDR3 SDRAM 1600MHz VFBGA96 | BGA | W631GU6NB12A |
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W29N01HVDKNF
Winbond
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1 | NAND Flash 1G-bit NAND flash, 3V, 1-bit ECC, 3V, 48 ball VFBGA (x8) | BGA | W29N01HVDKNF |
3
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W632GG6MB11K
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W632GG6MB11K |
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W631GG8MB09W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG8MB09W |
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W631GG6NB11K
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V⚫ Double Data Rate architecture: two data transfers per clock cycle⚫ Eight internal banks for concurrent operation⚫ 8 bit prefetch architecture⚫ CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14⚫ Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)⚫ Programmable read burst ordering: interleaved or nibble sequential⚫ Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit | BGA | W631GG6NB11K |
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W25M512JWBAM
Winbond
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1 | 512Mb Serial NOR Flash 104MHz TFBGA (5X5)24 | BGA | W25M512JWBAM |
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